Low-field magnetoresistance in GaAs two-dimensional holes

S. J. Papadakis, E. P. De Poortere, H. C. Manoharan, J. B. Yau, M. Shayegan, and S. A. Lyon
Phys. Rev. B 65, 245312 – Published 11 June 2002
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Abstract

We report low-field magnetotransport data in two-dimensional hole systems in GaAs/AlxGa1xAs heterostructures and quantum wells, in a large density range 2.5×1010<~p<~4.0×1011cm2, with a primary focus on samples grown on (311)A GaAs substrates. At high densities, p1×1011cm2, we observe a remarkably strong positive magnetoresistance. It appears in samples with an anisotropic in-plane mobility and predominantly along the low-mobility direction, and is strongly dependent on the perpendicular electric field and the resulting spin-orbit interaction-induced spin-subband population difference. A careful examination of the data reveals that the magnetoresistance must result from a combination of factors including the presence of two spin subbands, a corrugated quantum-well interface which leads to the mobility anisotropy, and possibly weak antilocalization. None of these factors can alone account for the observed positive magnetoresistance. We also present the evolution of the data with density: the magnitude of the positive magnetoresistance decreases with decreasing density until, at the lowest density studied (p=2.5×1010cm2), it vanishes and is replaced by a weak negative magnetoresistance.

  • Received 26 January 2002

DOI:https://doi.org/10.1103/PhysRevB.65.245312

©2002 American Physical Society

Authors & Affiliations

S. J. Papadakis*, E. P. De Poortere, H. C. Manoharan, J. B. Yau, M. Shayegan, and S. A. Lyon

  • Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544

  • *Present address: Dept. of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599.
  • Department of Physics and Geballe Laboratory for Advanced Materials, Stanford University, Stanford, Califonia 94305.

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Vol. 65, Iss. 24 — 15 June 2002

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