Binding energy of charged excitons in ZnSe-based quantum wells

G. V. Astakhov, D. R. Yakovlev, V. P. Kochereshko, W. Ossau, W. Faschinger, J. Puls, F. Henneberger, S. A. Crooker, Q. McCulloch, D. Wolverson, N. A. Gippius, and A. Waag
Phys. Rev. B 65, 165335 – Published 12 April 2002
PDFExport Citation

Abstract

Excitons and charged excitons (trions) are investigated in ZnSe-based quantum well structures with (Zn,Be,Mg)Se and (Zn,Mg)(S,Se) barriers by means of magneto-optical spectroscopy. Binding energies of negatively (X) and positively (X+) charged excitons are measured as functions of quantum well width, and free carrier density and in external magnetic fields up to 47 T. The binding energy of X shows a strong increase from 1.4 to 8.9 meV with decreasing quantum well width from 190 to 29Å. The binding energies of X+ are about 25% smaller than the X binding energy in the same structures. The magnetic field behavior of X and X+ binding energies differ qualitatively. With growing magnetic field strength, X increases its binding energy by 35–150%, while for X+ it decreases by 25%. Zeeman spin splittings and oscillator strengths of excitons and trions are measured and discussed.

  • Received 2 November 2001

DOI:https://doi.org/10.1103/PhysRevB.65.165335

©2002 American Physical Society

Authors & Affiliations

G. V. Astakhov and D. R. Yakovlev

  • Physikalisches Institut der Universität Würzburg, 97074 Würzburg, Germany
  • A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194017, St. Petersburg, Russia

V. P. Kochereshko

  • A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194017, St. Petersburg, Russia

W. Ossau and W. Faschinger

  • Physikalisches Institut der Universität Würzburg, 97074 Würzburg, Germany

J. Puls and F. Henneberger

  • Humboldt-Universität zu Berlin, Institut für Physik, 10115 Berlin, Germany

S. A. Crooker and Q. McCulloch

  • National High Magnetic Field Laboratory, Los Alamos, New Mexico 87545

D. Wolverson

  • University of Bath, BA2 7AY Bath, United Kingdom

N. A. Gippius

  • General Physics Institute, Russian Academy of Sciences, 117333 Moscow, Russia

A. Waag

  • Abteilung Halbleiterphysik, Universität Ulm, 89081 Ulm, Germany

References (Subscription Required)

Click to Expand
Issue

Vol. 65, Iss. 16 — 15 April 2002

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×