Observations of conduction-band structure of <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mn>4</mn><mi mathvariant="italic">H</mi></math></span>- and <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mn>6</mn><mi mathvariant="italic">H</mi><mo>−</mo><mi mathvariant="normal">SiC</mi></math></span>

I. Shalish; I. B. Altfeder; V. Narayanamurti

doi:10.1103/PhysRevB.65.073104

Observations of conduction-band structure of $4 H$ - and $6 H - SiC$

I. Shalish, I. B. Altfeder, and V. Narayanamurti

Phys. Rev. B 65, 073104 – Published 1 February 2002

Abstract

Ballistic electron-emission spectroscopy (BEES) and photoluminescence are used to study conduction-band structure related transport properties of the $4 H$ and $6 H$ polytypes of SiC. A secondary energy threshold at 2.7 eV is observed in the BEES spectrum of $4 H - SiC,$ in good agreement with a value of 2.8 eV deduced from reported ab initio calculations. The results from $6 H - SiC,$ are suggested to be influenced by transport properties of other polytype inclusions, also supported by band-edge transitions evident in $6 H - SiC$ photoluminescence spectra.

Received 2 April 2001

DOI:https://doi.org/10.1103/PhysRevB.65.073104

Authors & Affiliations

I. Shalish, I. B. Altfeder, and V. Narayanamurti

Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138

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Vol. 65, Iss. 7 — 15 February 2002

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Physical Review B

covering condensed matter and materials physics