Electronic structure of CsBi4Te6: A high-performance thermoelectric at low temperatures

P. Larson, S. D. Mahanti, D.-Y. Chung, and M. G. Kanatzidis
Phys. Rev. B 65, 045205 – Published 3 January 2002
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Abstract

Recently, a novel narrow-gap semiconductor CsBi4Te6 has been discovered with greater potential for low-temperature applications than the best existing high-performance thermoelectrics, Bi2Te3 and its alloys. Electronic structure calculations in this bulk system display reduced dimensionality of hole transport whose origin can be traced to the presence of Bi-Bi bonds (instead of Bi-Te and Te-Te bonds), unique for bismuth chalcogenide systems. This reduced dimensionality of charge transport along with the low thermal conductivity of this compound can explain the observed large thermoelectric figure of merit ZT in hole doped CsBi4Te6.

  • Received 27 July 2001

DOI:https://doi.org/10.1103/PhysRevB.65.045205

©2002 American Physical Society

Authors & Affiliations

P. Larson and S. D. Mahanti

  • Department of Physics & Astronomy, Michigan State University, East Lansing, Michigan 48824

D.-Y. Chung and M. G. Kanatzidis

  • Department of Chemistry, Michigan State University, East Lansing, Michigan 48824

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Vol. 65, Iss. 4 — 15 January 2002

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