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Surface stress-induced island shape transition in Si(001) homoepitaxy

V. Zielasek, Feng Liu, Yuegang Zhao, J. B. Maxson, and M. G. Lagally
Phys. Rev. B 64, 201320(R) – Published 5 November 2001
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Abstract

A low-energy electron microscopy study of two-dimensional Si(001) island shapes near thermal equilibrium on 10×15μm2 large single-domain terraces reveals a continuous increase of island aspect ratio and a shape transition from elliptical to “American-football”-like with increasing island size. The size-dependent island shapes are driven by elastic relaxation caused by the intrinsic surface stress anisotropy present on Si(001). Analysis of the measured elliptical island shapes based on an elastic-model calculation allows a quantitative determination of step energies and of the surface stress anisotropy as a function of temperature.

  • Received 6 September 2001

DOI:https://doi.org/10.1103/PhysRevB.64.201320

©2001 American Physical Society

Authors & Affiliations

V. Zielasek*, Feng Liu, Yuegang Zhao, J. B. Maxson, and M. G. Lagally

  • University of Wisconsin, Madison, Wisconsin 53706

  • *Present address: Institute for Solid State Physics, University of Hannover, D-30167 Hannover, Germany.
  • Present address: University of Utah, Salt Lake City, UT 84112.

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Vol. 64, Iss. 20 — 15 November 2001

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