Current-induced spatial patterns of photoluminescence in <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Al</mi></mrow><mrow><mi>x</mi></mrow></msub></mrow><mrow><msub><mrow><mi mathvariant="normal">Ga</mi></mrow><mrow><mn>1</mn><mi>−</mi><mi>x</mi></mrow></msub></mrow><mi mathvariant="normal">As</mi><mo>/</mo><mi mathvariant="normal">GaAs</mi></math></span> heterojunctions at quantizing magnetic fields

V. Novák; P. Svoboda; S. Kreuzer; W. Wegscheider; W. Prettl

doi:10.1103/PhysRevB.64.165302

Current-induced spatial patterns of photoluminescence in ${Al}_{x} {Ga}_{1 - x} As / GaAs$ heterojunctions at quantizing magnetic fields

V. Novák, P. Svoboda, S. Kreuzer, W. Wegscheider, and W. Prettl

Phys. Rev. B 64, 165302 – Published 28 September 2001

Abstract

A strong spontaneous spatial modulation of the photoluminescence near the AlGaAs/GaAs heterojunction has been found, if an external current and a quantizing magnetic field were applied to a homogeneously illuminated sample. A pattern of quenched and enhanced photoluminescence has been observed whose form varies synchronously with Shubnikov–de Haas oscillations. A phenomenological model of the effect is presented.

Received 20 April 2001

DOI:https://doi.org/10.1103/PhysRevB.64.165302

Authors & Affiliations

V. Novák and P. Svoboda

Institute of Physics AS CR, Cukrovarnická 10, 162 53 Praha 6, Czech Republic

S. Kreuzer, W. Wegscheider, and W. Prettl

Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040 Regensburg, Germany

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Vol. 64, Iss. 16 — 15 October 2001

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Physical Review B

covering condensed matter and materials physics