Formation of a $\mathrm{Si}\left(100\right)\mathrm{}c(8\mathrm{}\times 2)$ surface phase using H-induced self-organization and H extraction

A $\mathrm{Si}\left(100\right)\mathrm{}c(8\mathrm{}\times 2)$ surface phase has been fabricated using atomic-hydrogen-induced self-organization followed by hydrogen extraction by the tip of scanning tunneling microscope. Similar to a conventional $\mathrm{Si}\left(100\right)2\times 1$ surface, the new phase is built of Si dimer rows, but with every second dimer row being missing. The second-layer Si atoms in the troughs between dimer rows are also dimerized. The second-layer Si dimers at the opposite sides of a top Si dimer row demonstrate a tendency to be out of phase. This configuration induces buckling of the top Si dimer with a $c(8\mathrm{}\times 2)$ periodicity.