Abstract
An analytical study of the low-field magnetoresistance of a two-dimensional electron gas subject to a weak periodic modulation is presented. We assume the small-angle impurity scattering characteristic for high-mobility semiconductor heterostructures. It is shown that the condition for existence of the strong low-field magnetoresistance induced by so-called channeled orbits is where and q are the strength and the wave vector of the modulation, and l is the transport mean free path. Under this condition, the amplitude of the magnetoresistance scales as while the modulation-induced correction to resistivity at zero magnetic field is of the order of
- Received 21 December 2000
DOI:https://doi.org/10.1103/PhysRevB.64.125319
©2001 American Physical Society