Abstract
An intrinsic property of quaternary alloys with D being an isovalent trap is reported: a set of discrete band gaps occurs due to substitution of the isovalent trap D on sites with different nearest-neighbor environments. Exemplary, this phenomenon is demonstrated for (Ga,In)(N,As) by experiment and explained by tight-binding supercell calculations. The band gap of this nitrogen-poor alloy is blueshifted by simply moving the nitrogen isovalent traps from Ga-ligand rich sites to In-ligand rich sites, without changing the alloy composition.
- Received 29 May 2001
DOI:https://doi.org/10.1103/PhysRevB.64.121203
©2001 American Physical Society