Ultrafast carrier diffusion in gallium arsenide probed with picosecond acoustic pulses

We describe an experimental investigation of the generation and detection of picosecond acoustic-phonon pulses in a thin slab of GaAs using ultrashort optical pulses. Comparison of the optical phase variation with a simple theory for ambipolar diffusion indicates that carrier diffusion has a significant effect on the shape of the phonon pulses generated. The phonon pulse duration is measured to be ∼25 ps, four times longer than that expected from optical-absorption considerations alone, indicating that hot carriers penetrate more than 100 nm into the sample during the phonon pulse generation process.