Adsorption and reaction of acetylene and ethylene on the Si(001)2×1 surface

Fumihiko Matsui, Han Woong Yeom, Iwao Matsuda, and Toshiaki Ohta
Phys. Rev. B 62, 5036 – Published 15 August 2000
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Abstract

The electronic structures and the thermal reaction of chemisorbed C2H2 and C2H4 on the Si(001)2×1 surface have been investigated by carbon K-edge near-edge x-ray absorption fine structure (NEXAFS) and ultraviolet photoemission spectroscopy (UPS) using synchrotron radiation. The bonding and antibonding states due to the interaction of the molecules and the Si surface atoms are identified by detailed polarization-dependent UPS and NEXAFS measurements, respectively. These bonding and antibonding states are shown to originate from the hybridization between the occupied Si dangling bonds and the lowest unoccupied molecular orbitals (πCC*) of C2H2 and C2H4 double-σ-bonded on the top of the Si dimer. The thermal evolution of mainly C2H2 is investigated in detail for a wide temperature range of 601500 K from the condensation to the surface alloy formation. The coexistence of the physisorbatelike and the chemisorbed molecular species is observed at 7090 K for C2H2 and C2H4, for the coverages greater than 0.25 monolayer (ML). The πCC* resonance of those physisorbatelike C2H4 species in NEXAFS exhibits an unusual polarization dependence indicating adsorption with their molecular planes aligned perpendicular to the surface. The dissociation of C2H2 chemisorbates is shown to occur at 600700 K as observed by UPS. After the dissociation of molecules, the atomic hydrogen adsorbates are identified by the monohydridelike surface resonance states in the UP spectra at 800950 K. Most of the Si dangling bonds are passivated by, at least partly, the hydrogen adsorbates at this stage. At 1000 K, the desorption of hydrogen occurs, which accompanies the appearance of a broad SiC-like feature in the UP spectra at 3 eV below Fermi level.

  • Received 14 September 1999

DOI:https://doi.org/10.1103/PhysRevB.62.5036

©2000 American Physical Society

Authors & Affiliations

Fumihiko Matsui*

  • Department of Chemistry, Graduate School of Science, The University of Tokyo, Hongo 7-3-1, Tokyo 113-0033, Japan

Han Woong Yeom

  • Atomic-Scale Surface Research Center and Institute for Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea

Iwao Matsuda and Toshiaki Ohta

  • Department of Chemistry, Graduate School of Science, The University of Tokyo, Hongo 7-3-1, Tokyo 113-0033, Japan

  • *Present address: Graduate School of Material Science, Nara Institute of Science and Technology, Takayama-cho 8916-5, Ikoma 630-0101, Japan.
  • Author to whom correspondence should be addressed. FAX +82-2-312-7090. Electronic address: yeom@phya.yonsei.ac.kr

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Issue

Vol. 62, Iss. 8 — 15 August 2000

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