• Rapid Communication

Direct evidence of reduced dynamic scattering in the lower polariton of a semiconductor microcavity

P. Borri, J. R. Jensen, W. Langbein, and J. M. Hvam
Phys. Rev. B 61, R13377(R) – Published 15 May 2000
PDFExport Citation

Abstract

The temperature dependent linewidths of homogeneously broadened GaAs/AlxGa1xAs microcavity polaritons are investigated. The linewidths of the lower, middle, and upper polariton resonances are measured directly from reflection spectra at normal incidence (k=0). The linewidth of the lower polariton is found to be smaller than the linewidths of the middle and upper polaritons at all investigated temperatures ranging from 11 to 100 K. The results clearly show the reduction of dynamic scattering processes in the lower polariton compared to the middle and upper polaritons, in agreement with theoretical predictions in literature. A nontrivial temperature dependence of the linewidth is found and its physical origin is discussed.

  • Received 21 December 1999

DOI:https://doi.org/10.1103/PhysRevB.61.R13377

©2000 American Physical Society

Authors & Affiliations

P. Borri*, J. R. Jensen, W. Langbein*, and J. M. Hvam

  • Research Center COM, The Technical University of Denmark, Building 349, DK-2800 Kgs. Lyngby, Denmark

  • *Present address: Lehrstuhl für Experimentelle Physik EIIb, Universität Dortmund, Otto-Hahn Str.4, 44227 Dortmund, Germany.

References (Subscription Required)

Click to Expand
Issue

Vol. 61, Iss. 20 — 15 May 2000

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×