Abstract
We investigate the electronic structure of for various values of x. is a Mott-Hubbard insulator with band gap of about Hole doping in this system leads to the growth of a new feature at the Fermi level for 0.2, suggesting an insulator-to-metal transition. In addition, the metallic compositions show a metal-insulator transition between the bulk and the surface. We separate the surface and bulk electronic structures from the experimental spectra. The evolution of the bulk electronic structure as a function of doping is characterized by a spectral weight transfer from the incoherent to the coherent feature.
- Received 16 August 1999
DOI:https://doi.org/10.1103/PhysRevB.61.2525
©2000 American Physical Society