Spectroscopic investigations of the electronic structure and metal-insulator transitions in a Mott-Hubbard system La1xCaxVO3

K. Maiti and D. D. Sarma
Phys. Rev. B 61, 2525 – Published 15 January 2000
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Abstract

We investigate the electronic structure of La1xCaxVO3 for various values of x. LaVO3 is a Mott-Hubbard insulator with band gap of about 1.0±0.2eV. Hole doping in this system leads to the growth of a new feature at the Fermi level for x>~ 0.2, suggesting an insulator-to-metal transition. In addition, the metallic compositions show a metal-insulator transition between the bulk and the surface. We separate the surface and bulk electronic structures from the experimental spectra. The evolution of the bulk electronic structure as a function of doping is characterized by a spectral weight transfer from the incoherent to the coherent feature.

  • Received 16 August 1999

DOI:https://doi.org/10.1103/PhysRevB.61.2525

©2000 American Physical Society

Authors & Affiliations

K. Maiti and D. D. Sarma*

  • Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore - 560 012, India

  • *Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore. Electronic address: sarma@sscu.iisc.ernet.in

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Vol. 61, Iss. 4 — 15 January 2000

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