Activated mechanisms in amorphous silicon: An activation-relaxation-technique study

Normand Mousseau and G. T. Barkema
Phys. Rev. B 61, 1898 – Published 15 January 2000
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Abstract

At low temperatures, dynamics in amorphous silicon occurs through a sequence of discrete activated events that locally reorganize the topological network. Using the activation-relaxation technique, a database containing over 8000 such events is generated, and the events are analyzed with respect to their energy barrier and asymmetry, displacement and volume expansion/contraction. Special attention is paid to those events corresponding to diffusing coordination defects. The energetics is not clearly correlated with the displacement, nor with the defect density in well-relaxed configurations. We find however some correlation with the local volume expansion: it tends to increase by about 4eV/Å3. The topological properties of these events are also studied; they show an unexpectedly rich diversity.

  • Received 27 May 1999

DOI:https://doi.org/10.1103/PhysRevB.61.1898

©2000 American Physical Society

Authors & Affiliations

Normand Mousseau*

  • Department of Physics and Astronomy and Condensed Matter and Surface Science Program, Ohio University, Athens, Ohio 45701

G. T. Barkema

  • Theoretical Physics, Utrecht University, Princetonplein 5, 3584 CC Utrecht, The Netherlands

  • *Electronic address: mousseau@helios.phy.ohiou.edu
  • Electronic address: barkema@phys.uu.nl

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Vol. 61, Iss. 3 — 15 January 2000

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