Magnetoresistance of magnetic tunnel junctions in the presence of a nonmagnetic layer

A. Vedyayev, M. Chshiev, N. Ryzhanova, and B. Dieny
Phys. Rev. B 61, 1366 – Published 1 January 2000
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Abstract

A quantum-statistical theory of electron tunneling in magnetic junctions of the form F/P/O/F, where F and P are, respectively, a magnetic and a paramagnetic metal is presented. The effect of scattering at the P/O interface is discussed. The relatively slow decay of tunnel magnetoresistance experimentally observed when P is Cu as a function of the Cu layer thickness is explained by considering the particular shape of the Fermi surface in the (111) direction. For other metals, our model predicts a much more rapid decay, in agreement with experimental observations.

  • Received 8 April 1999

DOI:https://doi.org/10.1103/PhysRevB.61.1366

©2000 American Physical Society

Authors & Affiliations

A. Vedyayev

  • Department of Physics, Moscow Lomonosov University, Moscow 119899, Russia
  • CEA/Grenoble, Département de Recherche Fondamentale sur la Matière Condensée, SP2M/NM, 38054, Grenoble, France

M. Chshiev

  • Département de Recherche Fondamentale sur la Matière Condensée, SP2M/NM, 38054, Grenoble, France

N. Ryzhanova

  • Department of Physics, Moscow Lomonosov University, Moscow 119899, Russia
  • CEA/Grenoble, Département de Recherche Fondamentale sur la Matière Condensée, SP2M/NM, 38054, Grenoble, France

B. Dieny*

  • Département de Recherche Fondamentale sur la Matière Condensée, SP2M/NM, 38054, Grenoble, France

  • *FAX: (33) 476885097. Electronic address: dieny@drfmc.ceng.cea.fr

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Vol. 61, Iss. 2 — 1 January 2000

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