Local chemistry of Al and P impurities in silica

J. Lægsgaard and K. Stokbro
Phys. Rev. B 61, 12590 – Published 15 May 2000
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Abstract

The local structure around Al and P impurities in silica is investigated using density-functional theory. Two distinct cases are considered: impurities substituting for a Si atom in α quartz, and impurities implanted in a stoichiometric α-quartz crystal. Both impurity elements are found to have similar stable substitutional configurations; however, when they are implanted the geometries are quite different: While P prefers to stay in the interstitial region, Al tends to substitute for a Si atom, which in this way is forced into the interstitial region. The underlying chemical origin of the differences is revealed by an analysis of the electronic impurity levels, and the results clarify previous experimental data.

  • Received 21 December 1999

DOI:https://doi.org/10.1103/PhysRevB.61.12590

©2000 American Physical Society

Authors & Affiliations

J. Lægsgaard

  • Research Center COM, Technical University of Denmark, Building 349, DK-2800 Lyngby, Denmark

K. Stokbro

  • Mikroelektronik Centret, Technical University of Denmark, Building 345 East, DK-2800 Lyngby, Denmark

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Vol. 61, Iss. 19 — 15 May 2000

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