Simulations of interference effects in gated two-dimensional ballistic electron systems

Antti-Pekka Jauho, Konstantin N. Pichugin, and Almas F. Sadreev
Phys. Rev. B 60, 8191 – Published 15 September 1999
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Abstract

We present detailed simulations addressing recent electronic interference experiments, where a metallic gate is used to locally modify the Fermi wavelength of the charge carriers. Our numerical calculations are based on a solution of the one-particle Schrödinger equation for a realistic model of the actual sample geometry, including a Poisson equation-based determination of the potential due to the gate. The conductance is determined with the multiprobe Landauer-Büttiker formula, and in general we find conductance vs gate voltage characteristics, which closely resemble the experimental traces. A detailed examination based on quantum-mechanical streamlines suggests that the simple one-dimensional semiclassical model often used to describe the experiments has only a limited range of validity, and that certain “unexpected” periodicities should not be assigned any particular significance, they arise due to the complicated multiple scattering processes occurring in certain sample geometries.

  • Received 19 January 1999

DOI:https://doi.org/10.1103/PhysRevB.60.8191

©1999 American Physical Society

Authors & Affiliations

Antti-Pekka Jauho

  • Mikroelektronik Centret, Technical University of Denmark, Bldg 345east, DK-2800 Lyngby, Denmark

Konstantin N. Pichugin

  • Kirensky Institute of Physics, 660036 Krasnoyarsk, Russia
  • Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 16200 Prague, Czech Republic

Almas F. Sadreev

  • Kirensky Institute of Physics, 660036 Krasnoyarsk, Russia
  • Department of Physics, Åbo Akademi, SF-20500 Turku, Finland

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Vol. 60, Iss. 11 — 15 September 1999

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