Conduction channels at finite bias in single-atom gold contacts

Mads Brandbyge, Nobuhiko Kobayashi, and Masaru Tsukada
Phys. Rev. B 60, 17064 – Published 15 December 1999
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Abstract

We consider the effect of a finite voltage bias on the conductance of single-atom gold contacts. We employ a nonorthogonal spd-tight-binding Hamiltonian combined with a local charge neutrality assumption. The conductance and charge distributions for finite bias are calculated using the nonequilibrium-Green-function formalism. We calculate the voltage drop through the contacts and find the main drop located near the negative electrode. We argue that this is due to the filled d-state resonances. The conduction is analyzed in terms of transmission eigenchannels and density of states of the eigenchannels projected onto tight-binding orbitals. We find a single almost fully transmitting channel with mainly s character for low bias while for high bias this channel becomes less transmitting and additional channels involving only d orbitals start to conduct.

  • Received 8 June 1999

DOI:https://doi.org/10.1103/PhysRevB.60.17064

©1999 American Physical Society

Authors & Affiliations

Mads Brandbyge

  • Mikroelektronik Centret (MIC), Technical University of Denmark, Building 345E, DK-2800 Lyngby, Denmark

Nobuhiko Kobayashi

  • Surface and Interface Laboratory, The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan

Masaru Tsukada

  • Department of Physics, Graduate School of Science, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan

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Issue

Vol. 60, Iss. 24 — 15 December 1999

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