Effect of hydrostatic pressure on the characteristic parameters of Au/n-GaAs Schottky-barrier diodes

G. Çankaya, N. Uçar, E. Ayyildiz, H. Efeoğlu, A. Türüt, S. Tüzemen, and Y. K. Yoğurtçu
Phys. Rev. B 60, 15944 – Published 15 December 1999
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Abstract

Au/nGaAs Schottky barrier diodes SBDs have been fabricated. Schottky diode parameters such as the ideality factor, the series resistance, and the Schottky barrier height (SBH), Φb, have been measured as a function of hydrostatic pressure using the current-voltage (IV) technique. We have seen that the SBH has a linear pressure coefficient of 11.21 meV/kbar (=112.1 meV/GPa). Also, the series resistance value increases with increasing pressure. We have concluded that the variation of the barrier height due to the applied pressure should follow precisely the variation of the semiconductor band gap, accepting that the Fermi level is a reference level which is pinned to the valance-band maximum as a function of the pressure. That is, we have concluded that the experimental results is in agreement with the model that the pressure coefficient is caused by the pressure coefficient of the direct midgap level.

  • Received 16 November 1998

DOI:https://doi.org/10.1103/PhysRevB.60.15944

©1999 American Physical Society

Authors & Affiliations

G. Çankaya, N. Uçar, E. Ayyildiz, H. Efeoğlu, A. Türüt*, S. Tüzemen, and Y. K. Yoğurtçu

  • Physics Department, Faculty of Arts and Sciences, Atatürk University, Erzurum, Turkey

  • *Author to whom correspondence should be addresed. Fax.: +442 233 1062. Electronic address: amecit@rocketmail.com, or amecit@atauni.edu.tr

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Vol. 60, Iss. 23 — 15 December 1999

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