Angle-resolved photoemission in doped charge-transfer Mott insulators

A. S. Alexandrov and C. J. Dent
Phys. Rev. B 60, 15414 – Published 1 December 1999
PDFExport Citation

Abstract

A theory of angle-resolved photoemission (ARPES) in doped cuprates and other charge-transfer Mott insulators is developed taking into account the realistic (LDA+U) band structure, (bi)polaron formation due to the strong electron-phonon interaction, and a random-field potential. In most of these materials, the first band to be doped is the oxygen band inside the Mott-Hubbard gap. We derive the coherent part of the ARPES spectra with the oxygen hole spectral function calculated in the noncrossing (ladder) approximation and with the exact spectral function of a one-dimensional hole in a random potential. Some unusual features of ARPES, including the polarization dependence and spectral shape in YBa2Cu3O7 and YBa2Cu4O8, are described without any Fermi surface, large or small. The theory is compatible with the doping dependence of kinetic and thermodynamic properties of cuprates as well as with the d-wave symmetry of the superconducting order parameter.

  • Received 10 May 1999

DOI:https://doi.org/10.1103/PhysRevB.60.15414

©1999 American Physical Society

Authors & Affiliations

A. S. Alexandrov and C. J. Dent

  • Department of Physics, Loughborough University, Loughborough LE11 3TU, United Kingdom

References (Subscription Required)

Click to Expand
Issue

Vol. 60, Iss. 22 — 1 December 1999

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×