Analysis of surface structures through determination of their composition using STM: Si(100)4×3-In and Si(111)4×1-In reconstructions

A. A. Saranin; A. V. Zotov; V. G. Lifshits; J. -T. Ryu; O. Kubo; H. Tani; T. Harada; M. Katayama; K. Oura

doi:10.1103/PhysRevB.60.14372

Analysis of surface structures through determination of their composition using STM: Si(100)4×3-In and Si(111)4×1-In reconstructions

A. A. Saranin, A. V. Zotov, V. G. Lifshits, J. -T. Ryu, O. Kubo, H. Tani, T. Harada, M. Katayama, and K. Oura

Phys. Rev. B 60, 14372 – Published 15 November 1999

Abstract

The advantages of scanning tunneling microscopy for the determination of the composition of the submonolayer metal/silicon interfaces has been demonstrated using Si(100)4×3-In and Si(111)4×1-In as sample reconstructions. It has been found that the Si(100)4×3-In unit cell is built of 7 In atoms and 6 Si atoms, while the Si(111)4×1-In unit cell contains 3 In atoms and 2 Si atoms in addition to the top Si(111) bilayer. The obtained quantitative information provides the ground for discussion of the plausible atomic arrangement of these reconstructions.

Received 2 October 1998

DOI:https://doi.org/10.1103/PhysRevB.60.14372

Authors & Affiliations

A. A. Saranin

Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan;
Institute of Automation and Control Processes, 690041 Vladivostok, Russia;
Faculty of Physics and Engineering, Far Eastern State University, 690000 Vladivostok, Russia

A. V. Zotov

Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan;
Department of Electronics, Vladivostok State University of Economics and Service, 690600 Vladivostok, Russia;
Institute of Automation and Control Processes, 690041 Vladivostok, Russia

V. G. Lifshits

Institute of Automation and Control Processes, 690041 Vladivostok, Russia;
Faculty of Physics and Engineering, Far Eastern State University, 690000 Vladivostok, Russia;
Department of Electronics, Vladivostok State University of Economics and Service, 690600 Vladivostok, Russia

J. -T. Ryu, O. Kubo, H. Tani, T. Harada, M. Katayama, and K. Oura^*

Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan

^*Author to whom correspondence should be addressed. FAX: +81 6 876 4564. Electronic address: oura@ele.eng.osaka-u.ac.jp

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Vol. 60, Iss. 20 — 15 November 1999

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