Local atomic structure of semiconductor alloys using pair distribution functions. II.

Jean S. Chung and M. F. Thorpe
Phys. Rev. B 59, 4807 – Published 15 February 1999
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Abstract

A method of calculating the pair distribution function in semiconductor alloys has been extended to the differential and the partial pair distribution functions, and applied to pseudobinaries of the form A1xBxC with the zinc-blende structure. We have used a simple valence force model with bond-stretching and bond-bending forces. Results of calculations are presented for Ga0.5In0.5As. The differential pair distribution function provides a useful experimental way of determining the structural distortions in semiconductor alloys—specifically the mean nearest-neighbor and second-neighbor distances and widths can be obtained for chemically specific pairs of atoms.

  • Received 8 July 1998

DOI:https://doi.org/10.1103/PhysRevB.59.4807

©1999 American Physical Society

Authors & Affiliations

Jean S. Chung

  • Department of Physics, Chungbuk National University, Cheongju, Chungbuk, 361-763, Republic of Korea

M. F. Thorpe

  • Department of Physics and Astronomy and Center for Fundamental Materials Research, Michigan State University, East Lansing, Michigan 48824

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Vol. 59, Iss. 7 — 15 February 1999

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