Evolution of surface morphology during Fe/Si(111) and Fe/Si(001) heteroepitaxy

H. J. Kim, D. Y. Noh, J. H. Je, and Y. Hwu
Phys. Rev. B 59, 4650 – Published 15 February 1999
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Abstract

The evolution of Fe surface morphology during heteroepitaxial growth on Si(111) and Si(001) substrates was investigated using real-time synchrotron x-ray reflectivity measurements. The growth on the Si(111) surface was divided into the initial stage heteroepitaxial regime, the intermediate stage crossover regime, and the final-stage homoepitaxial regime. The evolution of the surface roughness in the late stage growth was described by the dynamic scaling exponent of β0.24 consistent with reported values. On the Si(001) surface, an interlayer was formed prior to the growth of a nonepitaxial Fe layer. The roughness evolution of the Fe/Si(001) was described by β0.36.

  • Received 22 July 1998

DOI:https://doi.org/10.1103/PhysRevB.59.4650

©1999 American Physical Society

Authors & Affiliations

H. J. Kim and D. Y. Noh

  • Department of Materials Science and Engineering and Center for Electronic Materials Research, Kwangju Institute of Science and Technology, Kwangju, Korea

J. H. Je

  • Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Korea

Y. Hwu

  • Institute of Physics, Academia Sinica, Taipei, Taiwan, Republic of China

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Vol. 59, Iss. 7 — 15 February 1999

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