Electron-paramagnetic-resonance measurements on the divacancy defect center R4/W6 in diamond

D. J. Twitchen, M. E. Newton, J. M. Baker, T. R. Anthony, and W. F. Banholzer
Phys. Rev. B 59, 12900 – Published 15 May 1999
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Abstract

Electron-paramagnetic-resonance (EPR) studies in radiation damaged diamond enriched to 5% 13C have resulted in the identification of the nearest-neighbor divacancy center. It is the isotopic enrichment, and consequent observation of 13C hyperfine lines, that has permitted the structure to be determined more than 30 years after the discovery of the center, known as R4 or W6. The center is produced by annealing radiation damaged diamonds to temperatures at which the vacancy is mobile (above about 900 K), and in pure diamond it is the dominant vacancy related product of irradiation and 900 K annealing. The divacancy anneals out upon prolonged annealing to temperatures above about 1100 K. Low-temperature EPR measurements determine the absolute sign of the largest principal value of the matrix, D3 to be negative; and measurements at temperatures between 4.2 and 300 K indicate that the matrix is temperature dependent in this interval. The center has C2h symmetry at low temperatures (30 K), and appears to change to axial symmetry about 111 at high temperatures (>400K). Analysis of the 13C hyperfine-coupling data using a simple molecular-orbital model shows that at low temperature the unpaired electron probability density is primarily located on four equivalent carbon atoms that are not in the {110} plane of reflection symmetry containing the two vacancies. These four carbon atoms show an outward relaxation around the divacancy. The low-temperature symmetry and localization of the unpaired electron probability density is surprising, the former in the light of theoretical predictions of a 3A2g ground state in the undistorted D3d symmetry and the latter in comparison with divacancies in silicon. A simple defect molecule calculation suggests that the divacancy has a 3Bu ground state at low temperatures with C2h symmetry. The large linewidth leaves it unclear whether the symmetry changes at high temperatures to D3d. The broadening of the EPR linewidth with increasing temperature does not originate from thermally activated reorientation between sites with C2h symmetry. It appears to be due to rapid spin- lattice relaxation (via the Orbach mechanism) at temperatures above 50 K, and simple analysis suggests that there is an excited state 20(1) meV above the ground state.

  • Received 19 January 1999

DOI:https://doi.org/10.1103/PhysRevB.59.12900

©1999 American Physical Society

Authors & Affiliations

D. J. Twitchen, M. E. Newton*, and J. M. Baker

  • Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford OX1 3PU, United Kingdom

T. R. Anthony

  • General Electric Company, Corporate Research and Development, Building K1, Room IC30, Schenectady, New York 12301

W. F. Banholzer

  • General Electric Lighting, 1975 Noble Road, Nela Park, Cleveland, Ohio 44112-6300

  • *Author to whom correspondence should be addressed.

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Vol. 59, Iss. 20 — 15 May 1999

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