Hydrogen-boron interactions in p-type diamond

J. Chevallier, B. Theys, A. Lusson, C. Grattepain, A. Deneuville, and E. Gheeraert
Phys. Rev. B 58, 7966 – Published 15 September 1998
PDFExport Citation

Abstract

We report on experimental evidence of hydrogen-boron interactions in boron-doped diamond from hydrogen diffusion investigations. Original deuterium diffusion studies in homoepitaxial B-doped diamond films reveal that hydrogen diffusion is limited by the B concentration with a low effective diffusion activation energy. These results are consistent with hydrogen ionization and diffusion of fairly mobile H+ that form pairs with B. Infrared spectroscopy experiments show that boron acceptor electronic transitions are removed under hydrogenation.

  • Received 9 February 1998

DOI:https://doi.org/10.1103/PhysRevB.58.7966

©1998 American Physical Society

Authors & Affiliations

J. Chevallier, B. Theys, A. Lusson, and C. Grattepain

  • Laboratoire de Physique des Solides de Bellevue, CNRS, 1 place Aristide Briand, 92195 Meudon Cedex, France

A. Deneuville and E. Gheeraert

  • Laboratoire d’Etudes des Propriétés Electroniques des Solides, CNRS, Boite Postale 166, 38042 Grenoble, France

References (Subscription Required)

Click to Expand
Issue

Vol. 58, Iss. 12 — 15 September 1998

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×