High-pressure studies on YNi2B2C at room temperature

S. Meenakshi, V. Vijayakumar, R. S. Rao, B. K. Godwal, S. K. Sikka, P. Ravindran, Z. Hossain, R. Nagarajan, L. C. Gupta, and R. Vijayaraghavan
Phys. Rev. B 58, 3377 – Published 1 August 1998
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Abstract

The electronic and lattice structure, and equation of state behavior of YNi2B2C has been investigated by electrical resistivity, thermoelectric power, and angle-dispersive x-ray-diffraction measurements. The electrical resistance under pressure has also been measured for other lanthanide-nickel borocarbides (RNi2B2C, R=Ho, Er, and Tm). The high pressure behavior is analyzed by electronic band-structure [tight-binding linear muffin-tin orbital (LMTO) and full-potential LMTO] calculations on YNi2B2C. The measured thermoelectric power shows a peak around 2 GPa pressure. X-ray powder diffraction measurements of the lattice parameter under pressure reveal that the carbon-filled variant of ThCr2Si2-type tetragonal structure prevailing under ambient conditions is preserved in YNi2B2C up to 6 GPa. Pressure-volume data on YNi2B2C yielded a bulk modulus of 200 GPa. This is in agreement with the value computed by the first-principles electronic-structure calculations. It is also shown that the observed peak in the thermoelectric power in YNi2B2C and the weak pressure dependence of the superconducting-transition temperature can be correlated with the details of the electronic density of states.

  • Received 29 April 1997

DOI:https://doi.org/10.1103/PhysRevB.58.3377

©1998 American Physical Society

Authors & Affiliations

S. Meenakshi, V. Vijayakumar, R. S. Rao, B. K. Godwal, and S. K. Sikka

  • High Pressure Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, India

P. Ravindran

  • Condensed Matter Theory Group, Department of Physics, Uppsala University, Box 530, 75121 Uppsala, Sweden

Z. Hossain, R. Nagarajan, and L. C. Gupta

  • Tata Institute of Fundamental Research, Colaba, Mumbai 400005, India

R. Vijayaraghavan

  • SAMEER, I.I.T. Campus, Mumbai 400076, India

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Issue

Vol. 58, Iss. 6 — 1 August 1998

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