Abstract
The nature and strength of the bonding forces between two H-passivated Si surfaces are studied with the density-functional theory, using an approach based on recent theoretical advances in understanding of van der Waals forces between two surfaces. Contrary to previous suggestions of van der Waals attraction between H overlayers, we find that the attraction is mainly due to long-range van der Waals interactions between the Si substrates, while the equilibrium separation is determined by short-range repulsion between occupied Si-H orbitals. Estimated bonding energies and Si-H frequency shifts are in qualitative agreement with experiment.
- Received 8 September 1998
DOI:https://doi.org/10.1103/PhysRevB.58.16118
©1998 American Physical Society