Charged exciton dynamics in GaAs quantum wells

G. Finkelstein, V. Umansky, I. Bar-Joseph, V. Ciulin, S. Haacke, J.-D. Ganière, and B. Deveaud
Phys. Rev. B 58, 12637 – Published 15 November 1998
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Abstract

We study the dynamics of the charged and neutral excitons in a modulation-doped GaAs quantum well by time-resolved photoluminescence under a resonant excitation. The radiative lifetime of the charged exciton is found to be surprisingly short, 60 ps. This time is temperature independent between 2 and 10 K, and increases by a factor of 2 at 6 T. We discuss our findings in view of present theories of exciton radiative decay.

  • Received 29 May 1998

DOI:https://doi.org/10.1103/PhysRevB.58.12637

©1998 American Physical Society

Authors & Affiliations

G. Finkelstein, V. Umansky, and I. Bar-Joseph

  • Department of Condensed Matter Physics, The Weizmann Institute of Science, 76100 Rehovot, Israel

V. Ciulin, S. Haacke, J.-D. Ganière, and B. Deveaud

  • Physics Department, Institute for Micro and Optoelectronics, Swiss Federal Institute of Technology, CH1015 Lausanne, Switzerland

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Vol. 58, Iss. 19 — 15 November 1998

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