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Long-range behavior of the layer-by-layer growth in Si/Si(111)-7×7 homoepitaxy

D. Y. Noh, Y. Hwu, and K. S. Liang
Phys. Rev. B 56, R7080(R) – Published 15 September 1997
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Abstract

Synchrotron x-ray scattering is used to reveal the long-range behavior of the layer-by-layer growth in Si/Si(111)-7×7. During the simultaneous nucleation of the first double bilayers, the long-range order of the 7×7 reconstruction diminishes continuously and disappears at the coverage of two bilayers. Based on the intensity variation at the 7×7 peak and at the specular reflection rod during the initial growth, the amount of the first three bilayers was obtained quantitatively. In addition, we measured the surface height fluctuation function in the steady-state layer-by-layer growth regime to reveal the morphology of the growth front.

  • Received 13 June 1997

DOI:https://doi.org/10.1103/PhysRevB.56.R7080

©1997 American Physical Society

Authors & Affiliations

D. Y. Noh

  • Department of Materials Science and Engineering, and Center for Electronic Materials Research, Kwangju Institute of Science and Technology, Kwangju, Korea

Y. Hwu

  • Institute of Physics, Academia Sinica, Taipei, Taiwan, Republic of China

K. S. Liang

  • Exxon Corporate Research Laboratory, Annandale, New Jersey 08801

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Vol. 56, Iss. 12 — 15 September 1997

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