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Theory of surface morphology of wurtzite GaN (0001) surfaces

Krzysztof Rapcewicz, Marco Buongiorno Nardelli, and J. Bernholc
Phys. Rev. B 56, R12725(R) – Published 15 November 1997
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Abstract

The influence of growth conditions and surface polarity upon the morphology of (0001) GaN surfaces is studied from first principles. The charge transfer between the Ga and N atoms in GaN and the very large electronegativity of nitrogen are found to play decisive roles in determining the stable reconstructions. Further, hydrogen stabilizes the ideally cleaved surface irrespective of polarity. For both polarities, adsorption of 3/4 of a monolayer of hydrogen results in a very stable surface with a 2×2 symmetry.

  • Received 1 August 1997

DOI:https://doi.org/10.1103/PhysRevB.56.R12725

©1997 American Physical Society

Authors & Affiliations

Krzysztof Rapcewicz, Marco Buongiorno Nardelli, and J. Bernholc

  • Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202

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Issue

Vol. 56, Iss. 20 — 15 November 1997

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