Sequential tunneling in doped superlattices: Fingerprints of impurity bands and photon-assisted tunneling

Andreas Wacker, Antti-Pekka Jauho, Stefan Zeuner, and S. James Allen
Phys. Rev. B 56, 13268 – Published 15 November 1997
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Abstract

We report a combined theoretical and experimental study of electrical transport in weakly coupled doped superlattices. Our calculations exhibit negative differential conductivity at sufficiently high electric fields for all dopings. In low-doped samples the presence of impurity bands modifies the current-voltage characteristics substantially, and we find two different current peaks whose relative height changes with the electron temperature. These findings can explain the observation of different peaks in the current-voltage characteristics with and without external THz irradiation in low-doped samples. From our microscopic transport model we obtain quantitative agreement with the experimental current-voltage characteristics without using any fitting parameters. Both our experimental data and our theory show that absolute negative conductance persists over a wide range of frequencies of the free-electron laser source.

  • Received 12 May 1997

DOI:https://doi.org/10.1103/PhysRevB.56.13268

©1997 American Physical Society

Authors & Affiliations

Andreas Wacker and Antti-Pekka Jauho

  • Mikroelektronik Centret, Danmarks Tekniske Universitet, DK-2800 Lyngby, Denmark

Stefan Zeuner and S. James Allen

  • Center for Terahertz Science and Technology, University of California at Santa Barbara, Santa Barbara, California 93106

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Vol. 56, Iss. 20 — 15 November 1997

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