Quantum Hall liquid-to-insulator transition in In1xGaxAs/InPt heterostructures

W. Pan, D. Shahar, D. C. Tsui, H. P. Wei, and M. Razeghi
Phys. Rev. B 55, 15431 – Published 15 June 1997
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Abstract

We report a temperature- and current-scaling study of the quantum Hall liquid-to-insulator transition in an In1xGaxAs/InP heterostructure. When the magnetic field is at the critical field Bc, ρxx=0.86h/e2. Furthermore, the transport near Bc scales as |B- Bc|Tκ with κ=0.45±0.05, and as |B- Bc|Ib with b=0.23±0.05. The latter can be due to phonon emission in a dirty piezoelectric medium, or can be the consequence of critical behavior near Bc, within which z=1.0±0.1 and ν=2.1±0.3 are obtained from our data.

    DOI:https://doi.org/10.1103/PhysRevB.55.15431

    ©1997 American Physical Society

    Authors & Affiliations

    W. Pan, D. Shahar, and D. C. Tsui

    • Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544

    H. P. Wei

    • Department of Physics, Swain Hall West, Indiana University, Bloomington, Indiana 47405

    M. Razeghi

    • Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208

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    Issue

    Vol. 55, Iss. 23 — 15 June 1997

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