Electric field effects on excitons in gallium nitride

F. Binet, J. Y. Duboz, E. Rosencher, F. Scholz, and V. Härle
Phys. Rev. B 54, 8116 – Published 15 September 1996
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Abstract

Electric-field effects on Wannier exciton are observed in GaN thin films. Using both absorption and photocurrent measurements, we have studied the excitonic Franz-Keldysh effect in thin epitaxial GaN films at temperatures between 80 and 300 K. We have measured the Stark shift, quenching, and broadening of the exciton peak with applied field. These results are compared with theoretical calculations from the literature. The physics of exciton ionization at varying temperatures is discussed, which explains the interplay between absorption and photocurrent. © 1996 The American Physical Society.

  • Received 21 March 1996

DOI:https://doi.org/10.1103/PhysRevB.54.8116

©1996 American Physical Society

Authors & Affiliations

F. Binet, J. Y. Duboz, and E. Rosencher

  • Laboratoire Central de Recherches, Thomson-CSF, 91404 Orsay Cedex, France

F. Scholz and V. Härle

  • 4. Physikalisches Institut, Universität Stuttgart, D-70550 Stuttgart, Germany

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Issue

Vol. 54, Iss. 11 — 15 September 1996

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