Interwell excitons in GaAs superlattices

D. Birkedal, K. El Sayed, G. Sanders, C. Spiegelberg, V. G. Lyssenko, C. Stanton, J. M. Hvam, V. B. Timofeev, and M. Bayer
Phys. Rev. B 54, 10316 – Published 15 October 1996
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Abstract

The formation of spatially indirect excitons in superlattices with narrow minibands is theoretically and experimentally investigated. We identify the experimental conditions for the observation of interwell excitons and find a distinct excitonic state energetically located between the 1s exciton and the onset of the miniband absorption. The interwell exciton is similar to the first Wannier-Stark localized exciton of an electrically biased superlattice. However, in the present case the localization is mediated by the Coulomb interaction of the electron and the hole without external fields. © 1996 The American Physical Society.

  • Received 23 April 1996

DOI:https://doi.org/10.1103/PhysRevB.54.10316

©1996 American Physical Society

Authors & Affiliations

D. Birkedal, K. El Sayed, G. Sanders, C. Spiegelberg, V. G. Lyssenko, C. Stanton, and J. M. Hvam

  • Mikroelektronik Centret, The Technical University of Denmark, DK-2800 Lyngby, Denmark

V. B. Timofeev

  • Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chenogolovka, Moscow district, Russia

M. Bayer

  • Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

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Issue

Vol. 54, Iss. 15 — 15 October 1996

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