Coupling of lateral and vertical electron motion in GaAs-AlxGa1xAs quantum wires and dots

G. Biese, C. Schüller, K. Keller, C. Steinebach, D. Heitmann, P. Grambow, and K. Eberl
Phys. Rev. B 53, 9565 – Published 15 April 1996
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Abstract

Electronic excitations in AlxGa1xAs-GaAs quantum wires and quantum dots have been investigated by means of resonant inelastic light scattering. At low frequencies, we find quasi-one-dimensional and quasi-zero-dimensional confined plasmons. Interestingly, we observe, at higher frequencies, not only the original two-dimensional (2D) intersubband excitations, but additional modes ωk in polarized scattering geometry. The experimental finding is that the frequencies of these modes obey the relation ωk2ω2D2+ω1D/0D2, where ω2D is the frequency of the vertical intersubband charge-density excitation. ω1D is a lateral quasi-one-dimensional confined plasmon frequency in wires and ω0D is the frequency of a quasi-zero-dimensional confined plasmon in dots. This relation shows that the additional modes are collective charge-density excitations, which occur due to a coupling of lateral and vertical electron motion. © 1996 The American Physical Society.

  • Received 29 November 1995

DOI:https://doi.org/10.1103/PhysRevB.53.9565

©1996 American Physical Society

Authors & Affiliations

G. Biese, C. Schüller, K. Keller, C. Steinebach, and D. Heitmann

  • Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung der Universität Hamburg, Jungiusstra\Se 11, 20355 Hamburg, Germany

P. Grambow and K. Eberl

  • Max-Planck-Institut für Festkörperforschung, Heisenbergstra\Se 1, 70569 Stuttgart, Germany

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Vol. 53, Iss. 15 — 15 April 1996

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