Temperature and density dependence of the electron Landé g factor in semiconductors

The temperature and density dependence of spin quantum beats of electrons is measured by time-resolved photoluminescence spectroscopy and yields the electron Landé g factor in bulk GaAs, InP, and CdTe. In GaAs the g factor increases linearly from -0.44 at 4 K to -0.30 at 280 K; in InP the g factor is 1.20 at 4 K, exhibiting a very small temperature dependence up to 160 K, and in CdTe the g factor follows between T=4 K and 240 K the empirical equation g=-1.653+4×${10}^{\mathrm{-}4}$ T+2.8×${10}^{\mathrm{-}6}$ ${\mathit{T}}^2$. In GaAs we demonstrate the suppression of spin quantum beats due to Fermi blocking in a degenerate electron gas and measure an increase of the GaAs g factor from -0.44 at densities below 1×${10}^{16}$ ${\mathrm{cm}}^{\mathrm{-}3}$ to -0.33 at ${10}^{17}$ ${\mathrm{cm}}^{\mathrm{-}3}$. © 1996 The American Physical Society.