Impurity and doping effects on the pseudoenergy gap in CeNiSn: A Sn NMR study

Ko-ichi Nakamura, Yoshio Kitaoka, Kunisuke Asayama, Toshiro Takabatake, Go Nakamoto, Hiroaki Tanaka, and Hironobu Fujii
Phys. Rev. B 53, 6385 – Published 1 March 1996
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Abstract

Measurements of Sn119 nuclear spin-lattice relaxation rate, 1/T1, and Knight shift, K, in the off-stoichiometric compound CeNi1.01Sn and the substituted compounds CeNi1xMxSn (M=Cu,Co) and Ce1xLaxNiSn have been made in order to unravel the impurity and/or carrier doping effects on the V-shaped gapped state in CeNiSn. From the detailed analysis of the T dependence of 1/T1, it is shown that the density of states (DOS) is induced just at the Fermi level for CeNi1.01Sn, whereas the DOS increases progressively with the dopant in a finite-energy range near the Fermi level for the substituted compounds. The respective substitution of Co and La into Ni and Ce sites changes the gapped state into the nonmagnetic Fermi-liquid state, whereas the replacement of Ni by Cu with x≳ 0.06 gives rise to the antiferromagnetic (AF) ground state. It is suggested that the AF order is realized by the combined effect of the rapid collapse of the V-shaped gap and the increase of the DOS at the Fermi level. It has been found to lead to the magnetic ground state and the nonmagnetic Fermi-liquid state to dope electrons and holes into the renormalized conduction bands, respectively. © 1996 The American Physical Society.

  • Received 11 October 1995

DOI:https://doi.org/10.1103/PhysRevB.53.6385

©1996 American Physical Society

Authors & Affiliations

Ko-ichi Nakamura, Yoshio Kitaoka, and Kunisuke Asayama

  • Department of Material Physics, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan

Toshiro Takabatake

  • Faculty of Integrated Arts and Sciences and Faculty of Science, Hiroshima University, Higashi-Hiroshima 739, Japan

Go Nakamoto, Hiroaki Tanaka, and Hironobu Fujii

  • Faculty of Integrated Arts and Sciences, Hiroshima University, Higashi-Hiroshima 739, Japan

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Issue

Vol. 53, Iss. 10 — 1 March 1996

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