Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films

C. Teichert, M. G. Lagally, L. J. Peticolas, J. C. Bean, and J. Tersoff
Phys. Rev. B 53, 16334 – Published 15 June 1996
PDFExport Citation

Abstract

In the growth of Si1xGex films on Si(001), the growth front undergoes a series of elastic stress relief mechanisms. We use these mechanisms in the molecular-beam-epitaxy growth of SiGe/Si superlattices to create relatively periodic surface and interface patterns of small coherent {105}-faceted SiGe crystallites. The self-organization of these islands is affected in different ways by tuning substrate miscut, alloy composition, and layer thickness. ©1996 The American Physical Society.

  • Received 14 February 1996

DOI:https://doi.org/10.1103/PhysRevB.53.16334

©1996 American Physical Society

Authors & Affiliations

C. Teichert and M. G. Lagally

  • University of Wisconsin–Madison, Madison, Wisconsin 53706

L. J. Peticolas and J. C. Bean

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974

J. Tersoff

  • IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598

References (Subscription Required)

Click to Expand
Issue

Vol. 53, Iss. 24 — 15 June 1996

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×