Abstract
In the growth of films on Si(001), the growth front undergoes a series of elastic stress relief mechanisms. We use these mechanisms in the molecular-beam-epitaxy growth of SiGe/Si superlattices to create relatively periodic surface and interface patterns of small coherent {105}-faceted SiGe crystallites. The self-organization of these islands is affected in different ways by tuning substrate miscut, alloy composition, and layer thickness. ©1996 The American Physical Society.
- Received 14 February 1996
DOI:https://doi.org/10.1103/PhysRevB.53.16334
©1996 American Physical Society