Resonant magnetotunneling spectroscopy of p-type-well interband tunneling diodes

R. R. Marquardt, D. A. Collins, Y. X. Liu, D. Z. -Y. Ting, and T. C. McGill
Phys. Rev. B 53, 13624 – Published 15 May 1996
PDFExport Citation

Abstract

We report experimental results of quantum transport through InAs/AlSb/GaSb/AlSb/InAs heterostructures having well widths of 7.0, 8.0, and 11.9 nm, respectively, in magnetic fields of up to 8.0 T aligned parallel to the epitaxial growth planes. Application of this resonant magnetotunneling spectroscopy technique allows the well subband dispersions to be probed along the wave vector perpendicular to both the growth direction and the applied magnetic field. In all three samples we observe little change in the current-voltage characteristics below a sample-dependent critical magnetic field Bcrit. Above this critical field, both the main I-V peak and a subsequent shoulder that forms at high fields shift in bias in a manner we attribute to be related to the HH2 and LH1 subbands (where HH and LH denote heavy and light holes), respectively. © 1996 The American Physical Society.

  • Received 28 August 1995

DOI:https://doi.org/10.1103/PhysRevB.53.13624

©1996 American Physical Society

Authors & Affiliations

R. R. Marquardt, D. A. Collins, Y. X. Liu, D. Z. -Y. Ting, and T. C. McGill

  • Thomas J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125

References (Subscription Required)

Click to Expand
Issue

Vol. 53, Iss. 20 — 15 May 1996

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×