Size-mismatch disorder at the surface of semiconductors

Normand Mousseau and M. F. Thorpe
Phys. Rev. B 52, 2660 – Published 15 July 1995
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Abstract

We study the effects of size-mismatch disorder on the surface relaxation of semiconductor solid solutions. Assuming a Kirkwood-type potential, we obtain an analytic solution for the nearest-neighbor distances and their distributions as a function of the distance from the surface as well as the displacements at the (111) and (100) surfaces. This solution is also valid for bond-mismatch disorder and is checked against computer simulations for two-dimensional triangular networks along (10) and (11) surfaces. Predictions are made for the topography of the (111) surface of a SiGe alloy.

  • Received 11 October 1994

DOI:https://doi.org/10.1103/PhysRevB.52.2660

©1995 American Physical Society

Authors & Affiliations

Normand Mousseau and M. F. Thorpe

  • Department of Physics and Astronomy and Center for Fundamental Materials Research, Michigan State University, East Lansing, Michigan 48824

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Issue

Vol. 52, Iss. 4 — 15 July 1995

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