Strain relaxation and self-organization phenomena in heteroepitaxial systems

S. Yu. Shiryaev, J. Lundsgaard Hansen, A. Nylandsted Larsen, F. Jensen, and J. Wulff Petersen
Phys. Rev. B 52, 15881 – Published 1 December 1995
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Abstract

The plastic behavior of strained, compositionally graded Si1xGex alloy layers grown on Si substrates has been studied by a combination of optical, atomic force, and transmission electron microscopy. Formation of ordered patterns of misfit dislocations has been found in films grown at low (∼500° C) temperatures, and examined at different length scales. We demonstrate that the strain relaxation in the thick metastable layers is an evolutionary propagative process, which is heterogenous from the very beginning and localized in narrow shear bands. It is shown that the relaxation process is characterized by dissipation of large amounts of the elastic internal energy accumulated during film growth and takes place far away from thermodynamic equilibrium. These results strongly suggest that the dislocation patterning in graded layers involves selforganization of dislocation populations. Striking analogies between the Seeger-Frank treatment of dislocation ordering in solids and the model of self-adjustment of misfit dislocations are elaborated. The graded Si1xGex/Si system will be shown to constitute a convenient model case for studying self-organization in crystalline material.

  • Received 2 May 1995

DOI:https://doi.org/10.1103/PhysRevB.52.15881

©1995 American Physical Society

Authors & Affiliations

S. Yu. Shiryaev, J. Lundsgaard Hansen, and A. Nylandsted Larsen

  • Institute of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C, Denmark

F. Jensen and J. Wulff Petersen

  • Mikroelektronik Centre, Building 345 East, The Technical University of Denmark, DK-2800 Lyngby, Denmark

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Vol. 52, Iss. 22 — 1 December 1995

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