Carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well structures

M. Volk, S. Lutgen, T. Marschner, W. Stolz, E. O. Göbel, P. C. M. Christianen, and J. C. Maan
Phys. Rev. B 52, 11096 – Published 15 October 1995
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Abstract

The carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well heterostructures have been determined as a function of the incorporated compressive strain in the (GaIn)As quantum-well layer by applying magneto-optical studies. The precise structural parameters, i.e., individual layer thicknesses, strain values, and crystalline perfection, have been determined independently by high-resolution x-ray diffraction and transmission electron microscopy. By analyzing both the allowed and forbidden optical transitions as a function of the magnetic field, detected by polarization-dependent magnetophotoluminescence excitation spectroscopy, the exciton binding energy as well as the effective in-plane electron and heavy-hole masses have been determined quantitatively as a function of strain. The theoretically predicted significant decrease of the in-plane heavy-hole mass with increasing strain has been observed. The obtained results are discussed and compared with the contradictory results reported in the literature.

  • Received 12 June 1995

DOI:https://doi.org/10.1103/PhysRevB.52.11096

©1995 American Physical Society

Authors & Affiliations

M. Volk, S. Lutgen, T. Marschner, W. Stolz, and E. O. Göbel

  • Materials Science Center and Department of Physics, Philipps University, D-35032 Marburg, Germany

P. C. M. Christianen and J. C. Maan

  • High Field Magnet Laboratory and Research Institute for Materials, University of Nijmegen, NL-6525 ED Nijmegen, The Netherlands

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Vol. 52, Iss. 15 — 15 October 1995

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