In-plane electrical resistivity of La2xSrxCuO4 at constant volume

Bertil Sundqvist and E. M. Charlotta Nilsson
Phys. Rev. B 51, 6111 – Published 1 March 1995
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Abstract

Literature data for the in-plane electrical resistivity ρ of single-crystal La2xSrxCuO4 with 0.07 ≤x≤0.34 have been corrected to constant crystal volume V using literature data for the pVT properties and for the resistivity vs pressure p. The original data at constant p show the usual anomalies observed for ceramic high-transition-temperature superconductors, such as linearity of ρ to extremely high T at optimum doping and an upwards curvature (ρ∝T1.5) for overdoped material. After correction, the data for ρ at constant volume are linear in T for overdoped material only. We show that phonons cannot be ruled out as the major carrier scattering agent.

  • Received 2 September 1994

DOI:https://doi.org/10.1103/PhysRevB.51.6111

©1995 American Physical Society

Authors & Affiliations

Bertil Sundqvist and E. M. Charlotta Nilsson

  • Department of Experimental Physics, Umeå University, S-90187 Umeå, Sweden

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Vol. 51, Iss. 9 — 1 March 1995

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