Excitonic optical nonlinearities and transport in the layered compound semiconductor GaSe

V. Mizeikis, V. G. Lyssenko, J. Erland, and J. M. Hvam
Phys. Rev. B 51, 16651 – Published 15 June 1995
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Abstract

Dephasing and transient grating experiments in the direct excitonic absorption region of GaSe at low temperatures show that a fast relaxation within the one-dimensionally disordered excitonic band results in band filling being the dominant mechanism of the optical nonlinearity. Correspondingly, we observe a blueshift of the nonlinear signal with excitation density. The temperature dependence of the exciton diffusion constant measured in directions parallel to the GaSe layer planes indicates that temperature-independent scattering (trapping) and scattering by acoustic phonons determine the exciton mobility at low temperatures.

  • Received 27 December 1994

DOI:https://doi.org/10.1103/PhysRevB.51.16651

©1995 American Physical Society

Authors & Affiliations

V. Mizeikis, V. G. Lyssenko, J. Erland, and J. M. Hvam

  • Mikroelektronik Centret, The Technical University of Denmark, DK-2800 Lyngby, Denmark

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Vol. 51, Iss. 23 — 15 June 1995

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