Electronic Raman scattering in p-doped GaAs/Ga1xAlxAs quantum-well structures: Scattering mechanisms and many-particle interactions

C. Schüller, J. Kraus, G. Schaack, G. Weimann, and K. Panzlaff
Phys. Rev. B 50, 18387 – Published 15 December 1994
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Abstract

By means of resonance Raman spectroscopy we have investigated intersubband transitions of quasi-two-dimensional (2D) hole gases in p-type modulation-doped GaAs/Ga1xAlxAs quantum-well structures. The observed excitations have an essentially single-particle character due to Landau damping of collective excitations and due to single-particle scattering by energy-density fluctuations under conditions of extreme resonance. In samples with well widths of typically 100–200 Å and 2D hole densities ρ∼1011 cm2, we observe a characteristic variation of intersubband-transition energies with laser frequency in depolarized and in polarized scattering configurations. This variation is caused by the nonparabolic subband dispersion of the 2D single-particle hole subbands. Experiments under variation of p, by illuminating the sample with photons that have energies above the band gap of the Ga1xAlxAs barriers, allow an estimate of the relative strengths of direct and exchange Coulomb interactions. From these experiments a greater relative strength of the exchange interaction, in comparison to that found for 2D electron gases, can be deduced.

  • Received 18 August 1994

DOI:https://doi.org/10.1103/PhysRevB.50.18387

©1994 American Physical Society

Authors & Affiliations

C. Schüller, J. Kraus, and G. Schaack

  • Physikalisches Institut der Universität Würzburg, 97074 Würzburg, Federal Republic of Germany

G. Weimann

  • Walter-Schottky-Institut der Technischen Universität München, 85748 Garching, Federal Republic of Germany

K. Panzlaff

  • Abteilung Optoelektronik der Universität Ulm, 89075 Ulm, Federal Republic of Germany

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Vol. 50, Iss. 24 — 15 December 1994

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