Abstract
The planarity of the aromatic stage of two-dimensional Si and Ge layers are theoretically investigated by first-principles total-energy calculations. While a C atom prefers to form the flat aromatic stage, i.e., graphite, Si and Ge prefer to form the corrugated aromatic stage. Si can be said to be the critical element by which the corrugated stage is formed.
- Received 12 July 1994
DOI:https://doi.org/10.1103/PhysRevB.50.14916
©1994 American Physical Society