Chemical order in amorphous silicon carbide

J. Tersoff
Phys. Rev. B 49, 16349 – Published 15 June 1994
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Abstract

While ordering in alloy crystals is well understood, short-range ordering in amorphous alloys remains controversial. Here, by studying computer-generated models of amorphous SiC, we show that there are two principal factors controlling the degree of chemical order in amorphous covalent alloys. One, the chemical preference for mixed bonds, is much the same in crystalline and amorphous materials. However, the other factor, the atomic size difference, is far less effective at driving ordering in amorphous material than in the crystal. As a result, the amorphous phase may show either strong ordering (as in GaAs), or weaker ordering (as in SiC), depending upon the relative importance of these two factors.

  • Received 14 February 1994

DOI:https://doi.org/10.1103/PhysRevB.49.16349

©1994 American Physical Society

Authors & Affiliations

J. Tersoff

  • IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598

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Issue

Vol. 49, Iss. 23 — 15 June 1994

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