Abstract
We calculate the equilibrium shape of a silicon crystal at orientations near (001), both at T=0 and at elevated temperature. Comparison with recent experiments shows that several topographic features observed on Si directly reflect the equilibrium shape. In particular, our results resolve an apparent discrepancy between theory and experiment, regarding faceting between regions of single-layer and double-layer steps.
- Received 2 October 1992
DOI:https://doi.org/10.1103/PhysRevB.47.4072
©1993 American Physical Society
