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Missing dimers and strain relief in Ge films on Si(100)

J. Tersoff
Phys. Rev. B 45, 8833(R) – Published 15 April 1992
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Abstract

The 2×8 reconstruction of Ge films of Si(100) is shown to arise from ordered arrays of rebonded missing dimers (RMD’s). Such a reconstruction was suggested by Pandey for Si(100). However, because of their large tensile stress, RMD’s are much more energetically favorable in epitaxially compressed Ge films. For Si(100), RMD’s have a very small energy, and their presence may account for the puzzling discrepancy between theory and experiment for the stress anisotropy.

  • Received 23 December 1991

DOI:https://doi.org/10.1103/PhysRevB.45.8833

©1992 American Physical Society

Authors & Affiliations

J. Tersoff

  • IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598

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Vol. 45, Iss. 15 — 15 April 1992

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