Abstract
We present data on parallel electric transport in thin /Si and Si//Si layers from 50 down to 12 Å. The data show that the surface roughness must be described by a large correlation length ξ, i.e., much larger than , where is the Fermi wave vector equal to 1 Å in . This is true whatever the model (Gaussian or exponential) used for the autocorrelation function. For /Si and Si//Si films we obtain, respectively, ξ=5 and 8 Å in the Gaussian model and 10 and 12 Å in the exponential one.
- Received 18 October 1991
DOI:https://doi.org/10.1103/PhysRevB.45.3929
©1992 American Physical Society